i ntegrated c ircuits d ivision www.ixysic.com ds-IAB110P-r04 1 IAB110P integrated telecom circuits e 3 pb applications features description pin configuration ? telecommunications ? telecom switching ? tip/ring circuits ? modem switching (laptop, notebook, pocket size) ? hook switch ? dial pulsing ? ground start ? ringer injection ? instrumentation ? multiplexers ? data acquisition ? electronic switching ? i/o subsystems ? meters (watt-hour, water, gas) ? medical equipment-patient/equipment isolation ? security ? aerospace ? industrial controls ? 3750v rms input/output isolation ? three functions in one package ? bidirectional current sensing ? bidirectional current switching ? fcc compatible ? no emi/rfi generation ? small 16-pin soic package (pcmcia compatible) ? machine insertable, wave solderable ? tape & reel versions available approvals ordering information ? ul recognized component: file e76270 ? csa certified component: certificate 1305490 ? en/iec 60950-1 certified component: tuv certificate: b 09 07 49410 006 part # description IAB110P 16-pin soic (50/tube) IAB110Ptr 16-pin soic (1000/reel) parameter rating units blocking voltage 350 v p load current 100 ma rms / ma dc on-resistance (max) 35 ? 1. (n/c) 2. + led - form a relay #1 3. C led - form a relay #1 4. + led - form b relay #2 5. C led - form b relay #2 6. emitter - phototransistor 7. collector - phototransistor 8. (n/c) 9. led - phototransistor +/C 10. led - phototransistor C/+ 11. output - form b relay #2 12. common source relay #2 13. output - form b relay #2 14. output - form a relay #1 15. common source relay #1 16. output - form a relay #1 (n/c) (n/c) (form a) (form b) 1 2 3 4 16 15 14 13 5 6 7 8 12 11 10 9 the IAB110P multifunction telecom switch combines one 350v single-pole, normally open (1-form-a) relay; one 350v single-pole, normally closed (1-form-b) relay; and one bidirectional optocoupler in a single package. optically coupled relay outputs that use the patented optomos architecture are controlled by a highly efficient gaaias infrared led. the IAB110P allows telecom circuit designers to combine three discrete functions in a single component, whose small package uses less space than traditional discrete component solutions. switching characteristics of normally open devices switching characteristics of normally closed devices form-b i f 10% 90% i load t on t off form-a i f i load 10% 90% t on t off
i ntegrated c ircuits d ivision www.ixysic.com 2 r04 IAB110P absolute maximum ratings @ 25oc absolute maximum ratings are stress ratings. stresses in excess of these ratings can cause permanent damage to the device. functional operation of the device at conditions beyond those indicated in the operational sections of this data sheet is not implied. parameter ratings units input control current, relay 50 ma total package dissipation 1 1w isolation voltage, input to output 3750 v rms operational temperature -40 to +85 c storage temperature -40 to +125 c 1 derate linearly 1.67 mw / oc electrical characteristics @25oc: relay section parameter conditions symbol min typ max units output characteristics blocking voltage (peak) i l =1 ? av l - - 350 v p load current continuous - i l - - 100 ma rms / ma dc peak t=10ms i lpk - - 350 ma p on-resistance i l =100ma r on --35 ? off-state leakage current v l =350v, t j =25oc i leak --1 ? a switching speeds turn-on i f =5ma, v l =10v t on --3 ms turn-off t off --3 ms output capacitance v l =50v, f=1mhz c out -25 - pf input characteristics input control current to activate i l =100ma i f --5 ma input control current to deactivate i l =1ma i f 0.4 - - ma input voltage drop i f =5ma v f 0.9 1.2 1.4 v reverse input voltage - v r --5 v reverse input current v r =5v i r --10 ? a parameter conditions symbol min typ max units output characteristics phototransistor blocking voltage i c =10 ? abv ceo 20 50 - v phototransistor dark current v ce =5v, i f =0ma i ceo - 50 500 na saturation voltage i c =2ma, i f =16ma v sat - 0.3 0.5 v current transfer ratio i f =6ma, v ce =0.5v ctr 33 - - % input characteristics input control current i c =2ma, v ce =0.5v i f -26ma input voltage drop i f =5ma v f 0.9 1.2 1.4 v input current (detector must be off) i c =1 ? a, v ce =5v - 5 25 - ? a capacitance, input to output v l =50v, f=1mhz c i/o -3 -pf isolation, input to output - v i/o 3750 - - v rms electrical characteristics @25oc: detector section
i ntegrated c ircuits d ivision IAB110P www.ixysic.com 3 r04 device performance data* * the performance data shown in the graphs above is typical of device performance. for guaranteed parameters not indicated in the written specifications, please contact our application department. typical led forward voltage drop (n=50, i f =5ma, ta=25c) 35 30 25 20 15 10 5 0 1.17 1.19 1.21 1.23 1.25 led forward voltage drop (v) device count (n) typical led forward voltage drop vs. temperature temperature (oc) led forward voltage drop (v) 1.8 1.6 1.4 1.2 1.0 0.8 -40 -20 0 20 40 60 80 120 100 i f =50ma i f =30ma i f =20ma i f =10ma i f =5ma typical leakage vs. temperature measured across pins 14&16 or 11&13 temperature (oc) leakage ( p a) -40 0.045 0.040 0.035 0.030 0.025 0.020 0.015 0.010 0.005 0 -20 0 20 40 60 80 100 energy rating curve time load current (a) 10 p s 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 1ms 100 p s 100ms 1s 10ms 10s 100s 1-form-a typical turn-on time (n=50, i f =5ma, i l =100ma dc , t a =25oc) 0.3 1.5 2.7 3.9 0.6 2.1 3.3 turn-on time (ms) device count (n) 25 20 15 10 5 0 1-form-a typical turn-off time (n=50, i f =5ma, i l =100ma dc , t a =25oc) 0.05 0.25 0.45 0.65 0.55 0.35 0.15 turn-off time (ms) device count (n) 25 20 15 10 5 0 1-form-a typical on-resistance distribution (n=50, i f =5ma, i l =100ma dc , t a =25oc) 35 30 25 20 15 10 5 0 18.75 20.95 23.15 25.35 19.85 22.05 24.25 on-resistance ( : ) device count (n) 1-form-a typical i f for switch operation (n=50, i l =100ma dc , t a =25oc) 0.65 1.17 1.69 0.39 0.91 1.43 1.95 led current (ma) device count (n) 25 20 15 10 5 0 1-form-a typical i f for switch dropout (n=50, i l =100ma dc , t a =25oc) 25 20 15 10 5 0 0.65 1.17 1.69 0.39 0.91 1.43 1.95 led current (ma) device count (n) 1-form-a typical blocking voltage distribution (n=50, t a =25oc) 35 30 25 20 15 10 5 0 377.5 399.5 421.5 443.5 388.5 410.5 432.5 blocking voltage (v p ) device count (n) 1-form-a relay performance data*
i ntegrated c ircuits d ivision www.ixysic.com 4 r04 IAB110P * the performance data shown in the graphs above is typical of device performance. for guaranteed parameters not indicated in the written specifications, please contact our application department. 1-form-a turn-on time vs. led forward current (i l =100ma dc ) led forward current (ma) turn-on time (ms) 0 5 1015202530354045 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 50 1-form-a typical turn-on time vs. temperature (i l =100ma dc ) temperature (oc) i f =5ma i f =10ma i f =20ma turn-on time (ms) -40 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 -20 0 20 40 60 80 100 1-form-a typical i f for switch operation vs. temperature (i l =100ma dc ) temperature (oc) led current (ma) -40 3.0 2.5 2.0 1.5 1.0 0.5 0 -20 0 20 40 60 80 100 1-form-a turn-off time vs. led forward current (i l =100ma dc ) led forward current (ma) turn-off time (ms) 0 5 1015202530354045 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 50 1-form-a typical turn-off time vs. temperature (i f =5ma, i l =100ma dc ) temperature (oc) turn-off time (ms) -40 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 -20 0 20 40 60 80 100 1-form-a typical i f for switch dropout vs. temperature (i l =100ma dc ) temperature (oc) led current (ma) -40 3.0 2.5 2.0 1.5 1.0 0.5 0 -20 0 20 40 60 80 100 1-form-a typical on-resistance vs. temperature (i f =5ma, i l =100ma dc ) temperature (oc) on-resistance ( : ) -40 60 50 40 30 20 10 0 -20 0 20 40 60 80 100 1-form-a maximum load current vs. temperature temperature (oc) load current (ma) 180 160 140 120 100 80 60 40 20 0 -40 -20 0 20 40 60 80 120 100 i f =20ma i f =10ma i f =5ma 1-form-a typical load current vs. load voltage (i f =5ma, t a =25oc) load voltage (v) load current (ma) 100 80 60 40 20 0 -20 -40 -60 -80 -100 -2.5 -2 -1 -0.5 -1.5 0 1 1.5 0.5 2 2.5 1-form-a typical blocking voltage vs. temperature temperature (oc) blocking voltage (v p ) -40 430 425 420 415 410 405 400 395 -20 0 20 40 60 80 100 1-form-a relay performance data (cont.)*
i ntegrated c ircuits d ivision IAB110P www.ixysic.com 5 r04 * the performance data shown in the graphs above is typical of device performance. for guaranteed parameters not indicated in the written specifications, please contact our application department. 1-form-b typical turn-on time (n=50, i f =5ma, i l =100ma dc , t a =25oc) 0.09 0.45 0.81 1.17 0.27 0.63 0.99 turn-on time (ms) device count (n) 25 20 15 10 5 0 1-form-b typical turn-off time (n=50, i f =5ma, i l =100ma dc , t a =25oc) 0.45 0.81 1.17 1.35 0.99 0.63 0.27 turn-off time (ms) device count (n) 25 20 15 10 5 0 1-form-b typical on-resistance distribution (n=50, i f =5ma, i l =100ma dc , t a =25oc) 25 20 15 10 5 0 25.5 27.5 29.5 31.5 26.5 28.5 30.5 on-resistance ( : ) device count (n) 1-form-b typical i f for switch operation (n=50, i l =100ma dc , t a =25oc) 25 20 15 10 5 0 0.33 0.77 1.21 1.65 0.55 0.99 1.43 led current (ma) device count (n) 1-form-b typical i f for switch dropout (n=50, i l =100ma dc , t a =25oc) 25 20 15 10 5 0 0.33 0.77 1.21 0.11 0.55 0.99 1.43 led current (ma) device count (n) 1-form-b typical blocking voltage distribution (n=50, t a =25oc) 25 20 15 10 5 0 357.5 387.5 417.5 443.5 372.5 402.5 432.5 blocking voltage (v p ) device count (n) 1-form-b turn-on time vs. led forward current (i l =100ma dc ) led forward current (ma) turn-on time (ms) 0 5 1015202530354045 0.30 0.25 0.20 0.15 0.10 0.05 0 50 1-form-b typical turn-on time vs. temperature (i f =5ma, i l =100ma dc ) temperature (oc) turn-on time (ms) -40 0.6 0.5 0.4 0.3 0.2 0.1 0 -20 0 20 40 60 80 100 1-form-b typical i f for switch operation vs. temperature (i l =100ma dc ) temperature (oc) led current (ma) -40 3.0 2.5 2.0 1.5 1.0 0.5 0 -20 0 20 40 60 80 100 1-form-b turn-off time vs. led forward current (i l =100ma dc ) led forward current (ma) turn-off time (ms) 0 5 1015202530354045 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 50 1-form-b typical turn-off time vs. temperature (i l =100ma dc ) temperature (oc) turn-off time (ms) -40 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 -20 0 20 40 60 80 100 i f =5ma i f =10ma i f =20ma 1-form-b typical i f for switch dropout vs. temperature (i l =100ma dc ) temperature (oc) led current (ma) -40 3.0 2.5 2.0 1.5 1.0 0.5 0 -20 0 20 40 60 80 100 1-form-b relay performance data*
i ntegrated c ircuits d ivision www.ixysic.com 6 r04 IAB110P * the performance data shown in the graphs above is typical of device performance. for guaranteed parameters not indicated in the written specifications, please contact our application department. typical normalized ctr vs. forward current (v ce =0.5v) forward currrent (ma) normalized ctr (%) 0 2 4 6 8 10 12 14 16 18 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 20 typical normalized ctr vs. temperature (v ce =0.5v) temperature (oc) normalized ctr (%) 8 7 6 5 4 3 2 1 0 -40 -20 0 20 40 60 80 120 100 i f =1ma i f =2ma i f =5ma i f =10ma i f =15ma i f =20ma typical collector current vs. forward current (v ce =0.5v) forward current (ma) collector current (ma) 0 2468 12 10 14 16 18 20 12 10 8 6 4 2 0 1-form-b relay performance data (cont.)* detector performance data* 1-form-b typical on-resistance vs. temperature (i f =5ma, i l =100ma dc ) temperature (oc) on-resistance ( : ) -40 60 50 40 30 20 10 0 -20 0 20 40 60 80 100 1-form-b load current vs. load voltage (i f =5ma, t a =25oc) load voltage (v) load current (ma) 100 80 60 40 20 0 -20 -40 -60 -80 -100 -5 -4 -2 -1 -3 0 2 3 145 1-form-b typical blocking voltage vs. temperature temperature (oc) blocking voltage (v p ) -40 410 405 400 395 390 385 380 -20 0 20 40 60 80 100 1-form-b maximum load current vs. temperature (i f =5ma) temperature (oc) load current (ma) 180 160 140 120 100 80 60 40 20 0 -40 -20 0 20 40 60 80 120 100
i ntegrated c ircuits d ivision IAB110P www.ixysic.com 7 r04 manufacturing information moisture sensitivity all plastic encapsulated semiconductor packages are susceptible to moisture ingression. ixys integrated circuits division classified all of its plastic encapsulated devices for moisture sensitivity according to the latest version of the joint industry standard, ipc/jedec j-std-020 , in force at the time of product evaluation. we test all of our products to the maximum conditions set forth in the standard, and guarantee proper operation of our devices when handled according to the limitations and information in that standard as well as to any limitations set forth in the information or standards referenced below. failure to adhere to the warnings or limitations as established by the listed specifications could result in reduced product performance, reduction of operable life, and/or reduction of overall reliability. this product carries a moisture sensitivity level (msl) rating as shown below, and should be handled according to the requirements of the latest version of the joint industry standard ipc/jedec j-std-033 . device moisture sensitivity level (msl) rating IAB110P msl 1 esd sensitivity this product is esd sensitive , and should be handled according to the industry standard jesd-625 . reflow profile this product has a maximum body temperature and time rating as shown below. all other guidelines of j-std-020 must be observed. device maximum temperature x time IAB110P 260oc for 30 seconds board wash ixys integrated circuits division recommends the use of no-clean flux formulations. however, board washing to remove flux residue is acceptable. since ixys integrated circuits division employs the use of silicone coating as an optical waveguide in many of its optically isolated products, the use of a short drying bake could be necessary if a wash is used after solder reflow processes. chlorine- or fluorine-based solvents or fluxes should not be used. cleaning methods that employ ultrasonic energy should not be used. e 3 pb
i ntegrated c ircuits d ivision specification: ds-IAB110P-r04 ? copyright 2012, ixys integrated circuits division all rights reserved. printed in usa. 12/19/2012 for additional information please visit our website at: www.ixysic.com 8 IAB110P ixys integrated circuits division makes no representations or warranties with respect to the accuracy or completeness of the co ntents of this publication and reserves the right to make changes to specifications and product descriptions at any time without notice. neither circuit patent licenses nor indemnity a re expressed or implied. except as set forth in ixys integrated circuits division?s standard terms and conditions of sale, ixys integrated circuits division assumes no liability whatsoever, a nd disclaims any express or implied warranty, relating to its products including, but not limited to, the implied warranty of merchantability, fitness for a particular purpose, or infri ngement of any intellectual property right. the products described in this document are not designed, intended, authorized or warranted for use as components in systems in tended for surgical implant into the body, or in other applications intended to support or sustain life, or where malfunction of ixys integrated circuits division?s product may resul t in direct physical harm, injury, or death to a person or severe property or environmental damage. ixys integrated circuits division reserves the right to discontinue or make changes to its p roducts at any time without notice. mechanical dimensions (inches) mm dimensions notes: 1. coplanarity = 0.1016 (0.004) max. 2. leadframe thickness does not include solder plating (1000 microinch maximum). 3. sum of package height, standoff, and coplanarity does not exceed 2.108 (0.083). 8.890 typ (0.350 typ) 0.406 typ (0.016 typ) 10.1600.381 (0.4000.015) 7.4930.127 (0.2950.005) 10.3630.127 (0.4080.005) 1.270 typ (0.050 typ) 0.635 x 45 (0.025 x 45) 0.254 0.0127 (0.0100.0005) 1.016 typ (0.040 typ) 0.5080.1016 (0.0200.004) pin 1 pin 16 2.108 max (0.083 max) see note 3 min: 0.0254 (0.001) max: 0.102 (0.004) lead to package standoff: 1.90 (0.075) 1.27 (0.050) 9.30 (0.366) 0.60 (0.024) pcb land pattern IAB110P IAB110Ptr tape & reel dimensions mm (inches) embossment embossed carrier top cover tape thickness 0.102 max. (0.004 max.) 330.2 dia. (13.00 dia.) k 0 =3.20 (0.126) k 1 =2.70 (0.106) a 0 =10.90 (0.429) w=16 (0.630) b 0 =10.70 (0.421) p=12.00 (0.472) notes: 1. all dimensions carry tolerances of eia standard 481-2 2. the tape complies with all notes for constant dimensions listed on page 5 of eia-481-2
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